Deuterium Adsorption on Free-Standing Graphene

A suitable way to modify the electronic properties of graphene—while maintaining exceptional associated with its two-dimensional (2D) nature—is functionalisation. In particular, incorporation hydrogen isotopes in graphene is expected leading an energy gap opening, thereby rendering promising for a widespread applications. Hence, deuterium (D) adsorption on free-standing was obtained by high-energy electron ionisation D2 and ion irradiation nanoporous (NPG) sample. This method allows one reach nearly 50 at.% D upload graphene, higher than that other deposition methods so far, towards low-defect D-graphane. That evidence deduced X-ray photoelectron spectroscopy C 1s core level, showing clear D-C sp3 bond, Raman spectroscopy, pointing remarkably clean production graphane. Moreover, ultraviolet showed opening valence band. Therefore, outstanding obtaining low defect D-NPG high upload, which very fabrication semiconducting graphane large scale.